发明申请
US20050139916A1 High voltage semiconductor device and fabricating method thereof
审中-公开
高压半导体器件及其制造方法
- 专利标题: High voltage semiconductor device and fabricating method thereof
- 专利标题(中): 高压半导体器件及其制造方法
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申请号: US11020276申请日: 2004-12-27
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公开(公告)号: US20050139916A1公开(公告)日: 2005-06-30
- 发明人: Jum Kim , Sung Jung
- 申请人: Jum Kim , Sung Jung
- 申请人地址: KR Seoul
- 专利权人: DongbuAnam Semiconductor, Inc.
- 当前专利权人: DongbuAnam Semiconductor, Inc.
- 当前专利权人地址: KR Seoul
- 优先权: KR10-2003-0098356 20031227
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/417 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113
摘要:
A high voltage semiconductor device and fabricating method thereof, enable a high breakdown voltage to be provided from a surface area without forming a dual spacer layer. The semiconductor device includes a semiconductor substrate having source/drain regions separated from each other by a channel region in-between, a gate insulating layer pattern on the channel region, a gate conductor layer pattern on the gate insulating layer, a sidewall insulating layer provided on a sidewall of the gate conductor layer pattern, a salicide suppress layer pattern covering partial, but not entire, surfaces of the source/drain regions, and covering the sidewall insulating layer, and the gate conductor layer pattern, and a metal salicide layer on remaining portions surfaces of the source/drain regions that are not covered with the salicide suppress layer pattern.