发明申请
- 专利标题： Laser mask and crystallization method using the same
- 专利标题（中）： 激光掩模和结晶法使用相同
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申请号： US11016782申请日： 2004-12-21
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公开(公告)号： US20050142453A1公开(公告)日： 2005-06-30
- 发明人: Hyun Seo , Yun Jung , Young Kim , JaeSung You
- 申请人： Hyun Seo , Yun Jung , Young Kim , JaeSung You
- 优先权： KR96872/2003 20031224
- 主分类号： G02F1/136
- IPC分类号： G02F1/136 ; B23K26/06 ; G03F1/14 ; G03F9/00 ; H01L21/00 ; H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L29/786
摘要：
A laser mask includes a mask pattern with edges having inverted shapes to alleviate the effects of diffraction of laser beams to reduce overlap regions such that crystallization characteristics are improved. The laser mask includes a mask pattern that includes transmitting regions and a blocking region. The edges of the mask have shapes inverted to the shapes of the edges of a silicon thin film crystallized by the pattern.
公开/授权文献
- US07569307B2 Laser mask and crystallization method using the same 公开/授权日：2009-08-04
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