发明申请
- 专利标题： Thin film transistor and method of manufacturing the same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US11013398申请日： 2004-12-17
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公开(公告)号： US20050145843A1公开(公告)日： 2005-07-07
- 发明人: Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
- 申请人： Huaxiang Yin , Takashi Noguchi , Wenxu Xianyu , Do-young Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 优先权： KR10-2003-0092611 20031217
- 主分类号： H01L29/417
- IPC分类号： H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; H01L29/04 ; H01L21/00
摘要：
A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.
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