发明申请
- 专利标题： Silicon carbide semiconductor device
- 专利标题（中）： 碳化硅半导体器件
-
申请号： US10995566申请日： 2004-11-24
-
公开(公告)号： US20050145852A1公开(公告)日： 2005-07-07
- 发明人: Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
- 申请人： Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
- 专利权人： DENSO CORPORATION
- 当前专利权人： DENSO CORPORATION
- 优先权： JP2003-399931 20031128
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/337 ; H01L29/24 ; H01L29/808 ; H01L29/15
摘要：
A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.
公开/授权文献
信息查询
IPC分类:
