A method is provided to provide surface-emitting type semiconductor lasers and methods for manufacturing the same, which can readily control transverse modes of laser light. A surface-emitting type semiconductor laser pertains to a surface-emitting type semiconductor laser having a vertical resonator above a substrate. The vertical resonator includes a first mirror, an active layer and a second mirror disposed in this order from the substrate, and is equipped with an optical path adjusting layer having a concave curved surface over the second mirror.