发明申请
US20050148136A1 CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
有权
具有金属和硅化物电极的CMOS器件及其制造方法
- 专利标题: CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT
- 专利标题(中): 具有金属和硅化物电极的CMOS器件及其制造方法
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申请号: US10748559申请日: 2003-12-29
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公开(公告)号: US20050148136A1公开(公告)日: 2005-07-07
- 发明人: Justin Brask , Mark Doczy , Jack Kavalieros , Matthew Metz , Chris Barns , Uday Shah , Suman Datta , Christopher Thomas , Robert Chau
- 申请人: Justin Brask , Mark Doczy , Jack Kavalieros , Matthew Metz , Chris Barns , Uday Shah , Suman Datta , Christopher Thomas , Robert Chau
- 主分类号: H01L21/8238
- IPC分类号: H01L21/8238 ; H01L23/48
摘要:
A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate.