发明申请
- 专利标题: Lift pin for used in semiconductor manufacturing facilities and method of manufacturing the same
- 专利标题(中): 用于半导体制造设备的升降销及其制造方法
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申请号: US11030808申请日: 2005-01-05
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公开(公告)号: US20050150462A1公开(公告)日: 2005-07-14
- 发明人: Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
- 申请人: Jung-Hun Seo , Yun-Ho Choi , Young-Wook Park , Jeong-Tae Kim
- 申请人地址: KR Suwon-Si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-Si
- 优先权: KR2004-0233 20040105
- 主分类号: H01L21/205
- IPC分类号: H01L21/205 ; C23C16/00 ; C23C16/44 ; C23C16/458 ; H01L21/687
摘要:
Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.