Invention Application
- Patent Title: Porous gas sensors and method of preparation thereof
- Patent Title (中): 多孔气体传感器及其制备方法
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Application No.: US11041358Application Date: 2005-01-24
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Publication No.: US20050151214A1Publication Date: 2005-07-14
- Inventor: James Gole , Lenward Seals , Peter Hesketh
- Applicant: James Gole , Lenward Seals , Peter Hesketh
- Main IPC: H01L27/14
- IPC: H01L27/14
Abstract:
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
Public/Granted literature
- US07838949B2 Porous gas sensors and method of preparation thereof Public/Granted day:2010-11-23
Information query
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