发明申请
US20050151265A1 Efficient use of wafer area with device under the pad approach
审中-公开
利用垫片方式下的设备有效利用晶圆区域
- 专利标题： Efficient use of wafer area with device under the pad approach
- 专利标题（中）： 利用垫片方式下的设备有效利用晶圆区域
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申请号： US10758148申请日： 2004-01-14
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公开(公告)号： US20050151265A1公开(公告)日： 2005-07-14
- 发明人: Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun , Darlene Hamilton
- 申请人： Nian Yang , Hiroyuki Ogawa , Yider Wu , Kuo-Tung Chang , Yu Sun , Darlene Hamilton
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L23/485 ; H01L27/02 ; H01L23/48 ; H01L21/44
摘要：
More efficient use of silicon area is achieved by incorporating an active device beneath a pad area of a semiconductor structure. The pad area includes a substrate having a first metal layer above it. A second metal layer is below the first metal layer. The active device resides in the substrate below the second metal layer. A layer of dielectric separates the first and second metal layers. A via within the dielectric layer electrically couples the first and second metal layers. A via connects to the active component. Subsequent metal layers can be arranged between the first and second metal layers.
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