- 专利标题： Electron-emitting device, electron source, and image-forming apparatus
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申请号： US11008925申请日： 2004-12-13
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公开(公告)号： US20050151703A1公开(公告)日： 2005-07-14
- 发明人: Toshikazu Ohnishi , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Ono , Masanori Mitome
- 申请人： Toshikazu Ohnishi , Masato Yamanobe , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Takeo Ono , Masanori Mitome
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP5-331103 19931227; JP5-335925 19931228; JP6-137317 19940620
- 主分类号： H01J1/316
- IPC分类号： H01J1/316 ; H01J9/02 ; H01J63/04
摘要：
An electron-emitting device comprises a pair of oppositely disposed electrodes and an electroconductive film arranged between the electrodes and including a high resistance region. The high resistance region has a deposit containing carbon as a principal ingredient. The electron-emitting device can be used for an electron source of an image-forming apparatus of the flat panel type.
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