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    PATTERNING METHOD AND METHODS FOR PRODUCING ELECTRO-OPTIC DEVICE, COLOR FILTER, ILLUMINANT, AND THIN-FILM TRANISISTOR
    3.
    发明申请
    PATTERNING METHOD AND METHODS FOR PRODUCING ELECTRO-OPTIC DEVICE, COLOR FILTER, ILLUMINANT, AND THIN-FILM TRANISISTOR 失效
    用于生产电光装置，彩色滤光片，照明器和薄膜晶体管的方法和方法

    公开(公告)号：US20070148564A1

    公开(公告)日：2007-06-28

    申请号：US11566488

    申请日：2006-12-04

    Applicant: OSAMU IKETA ,  NOBUO KAWASE ,  KEISHI SAITO ,  TAKEO ONO

    Inventor： OSAMU IKETA ,  NOBUO KAWASE ,  KEISHI SAITO ,  TAKEO ONO

    IPC: G03F1/00

    CPC classification number: G03F7/167 ,  G02B5/201 ,  G03F7/0007 ,  G03F7/40 ,  H01L51/0005

    Abstract: A patterning method forms a pattern including a lyophilic region and a lyophobic region. The method includes treating the surface of an object by exposing an atmosphere containing at least one gas selected from the group consisting of hydrogen, deuterium, deuterated hydrogen, and tritium; partially exposing the treated surface to light to form an exposed region and an unexposed region; and applying a liquid onto one of the exposed region and the unexposed region.

    Abstract translation: 图案化方法形成包括亲液性区域和疏液区域的图案。 该方法包括通过暴露含有选自氢，氘，氘化氢和氚的至少一种气体的气氛来处理物体的表面; 将经处理的表面部分地曝光以形成曝光区域和未曝光区域; 以及将液体施加到所述暴露区域和未曝光区域中的一个上。

    Electron source, image forming apparatus, and manufacture method for electron source
    6.
    发明授权
    Electron source, image forming apparatus, and manufacture method for electron source 失效
    电子源，成像装置和电子源的制造方法

    公开(公告)号：US06794813B2

    公开(公告)日：2004-09-21

    申请号：US10443106

    申请日：2003-05-22

    Applicant: Takeo Ono ,  Toru Sugeno

    Inventor： Takeo Ono ,  Toru Sugeno

    IPC: H01J1924

    CPC classification number: H01J1/316

    Abstract: Uniformity of the electron emission characteristics of electron emitting devices is improved. A substrate is formed with row-directional wires and column-directional wires electrically connected to electron emitting devices disposed in a matrix shape and each having electrodes and an electroconductive film. A pseudo row-directional wire is formed at a position X0 between a position X1 of a row-directional wire and a periphery of the substrate, and a pseudo column-directional wire is formed at a position Y0 between a position Y1 of a column-directional wire and a periphery of the substrate. Pseudo electrodes and are electrically connected to the pseudo row-directional wire and pseudo column-directional wire.

    Abstract translation: 提高了电子发射器件的电子发射特性的均匀性。 基板形成有行方向布线和列方向布线，电连接到以矩阵形状布置并且各自具有电极和导电膜的电子发射器件。 在行方向导线的位置X1与基板周围的位置X0处形成伪行方向布线，并且在列列方向布线的位置Y1之间的位置Y0处形成伪列方向布线， 方向线和基底的周边。 伪电极电连接到伪行方向线和伪列方向线。

    Optical device with an asymmetric dual quantum well structure
    7.
    发明授权
    Optical device with an asymmetric dual quantum well structure 失效
    具有不对称双量子阱结构的光器件

    公开(公告)号：US5569934A

    公开(公告)日：1996-10-29

    申请号：US535349

    申请日：1995-09-28

    Applicant: Kazuhito Fujii ,  Takeo Ono

    Inventor： Kazuhito Fujii ,  Takeo Ono

    IPC: G02F1/025 ,  G02F1/015 ,  G02F1/017 ,  H01L31/14 ,  H01S5/00 ,  H01S5/062 ,  H01S5/34 ,  H01S5/50 ,  H01L29/205 ,  H01L31/0304

    CPC classification number: B82Y20/00 ,  G02F1/01725 ,  H01S5/34 ,  H01S5/5045 ,  G02F1/01708 ,  G02F2001/0151 ,  G02F2001/01741 ,  G02F2201/307 ,  G02F2203/055 ,  H01S5/06206 ,  H01S5/3408

    Abstract: An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plurality (at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer having a narrower band gap is made narrower than that of a less deeper quantum well layer having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.

    Abstract translation: 光学器件包括由彼此耦合的多个（至少两个）不同的半导体量子阱层组成的非对称双量子阱（ADQW）结构。 在ADQW结构中，具有较窄带隙的较深量子阱层的宽度比具有较宽带隙的较深的量子阱层的宽度窄，使得激子波长的移动几乎不会由于量子 通过在预定范围内施加电场来限制Stark效应。 结果，仅改变ADQW结构的折射率，但是通过施加电场，给定波长范围内的吸收系数几乎不变化。 此外，提供了用于向非对称双量子阱结构施加电场的构件。

    Semiconductor optical filter and an optical communication system using the same
    8.
    发明授权
    Semiconductor optical filter and an optical communication system using the same 失效
    半导体光滤波器及其使用的光通信系统

    公开(公告)号：US5440581A

    公开(公告)日：1995-08-08

    申请号：US2276

    申请日：1993-01-08

    Applicant: Takeo Ono ,  Jun Nitta

    Inventor： Takeo Ono ,  Jun Nitta

    IPC: G02F1/015 ,  G02F1/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/34 ,  H01S5/50 ,  H01S3/08

    CPC classification number: B82Y20/00 ,  H01S5/5045 ,  H01S5/12 ,  H01S5/3418

    Abstract: A semiconductor optical filter that includes a semiconductor substrate and a laser structure formed on the substrate. The laser structure includes an active layer of a quantum well structure and a grating formed along the active layer. The active layer is constructed to have a ground state level and an energy level other than the ground state level. A saturation gain of the ground state level is set to a value less than an internal loss, and the other energy level is set to permit an increase in the amount of carriers injected into the laser structure. The laser structure is typically a distributed feedback type laser structure. Anti-reflection coatings may be formed on the end surfaces of the laser structure.

    Abstract translation: 一种半导体滤光器，包括半导体衬底和形成在衬底上的激光器结构。 激光器结构包括量子阱结构的有源层和沿有源层形成的光栅。 有源层被构造成具有基态状态电平和除基态电平以外的能级。 基态状态电平的饱和增益被设定为小于内部损耗的值，另一个能级被设定为允许注入到激光器结构中的载流子的量增加。 激光器结构通常是分布式反馈型激光器结构。 可以在激光结构的端面上形成防反射涂层。

    Method of transferring Bloch lines
    9.
    发明授权
    Method of transferring Bloch lines 失效
    转移布洛赫线的方法

    公开(公告)号：US5172336A

    公开(公告)日：1992-12-15

    申请号：US734098

    申请日：1991-07-23

    Applicant: Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

    Inventor： Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

    IPC: G11C19/08

    CPC classification number: G11C19/0816 ,  G11C19/0858

    Abstract: A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.

    Abstract translation: 在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤：在磁性薄膜上分配预定的软磁性材料层图案，向磁性薄膜施加磁场 软磁材料层图案平行于磁性薄膜的薄膜表面，以在磁性薄膜中形成势阱，将布洛赫线定位在势阱中，并改变软磁材料层图案的磁化方向 平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。

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