发明申请
US20050157827A1 Method and circuit for writing double data rate (DDR) sampled data in a memory device
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用于在存储器件中写入双倍数据速率(DDR)采样数据的方法和电路
- 专利标题: Method and circuit for writing double data rate (DDR) sampled data in a memory device
- 专利标题(中): 用于在存储器件中写入双倍数据速率(DDR)采样数据的方法和电路
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申请号: US11037602申请日: 2005-01-18
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公开(公告)号: US20050157827A1公开(公告)日: 2005-07-21
- 发明人: Yong-Jin Yoon , Jong-Cheol Lee , Uk-Rae Cho
- 申请人: Yong-Jin Yoon , Jong-Cheol Lee , Uk-Rae Cho
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2004-4208 20040120
- 主分类号: G11C11/417
- IPC分类号: G11C11/417 ; G11C7/10 ; G11C11/40 ; H04L7/00
摘要:
A method and circuit for sampling and writing data in a double data rate (DDR) memory device, capable of securing sufficient setup and hold margins regardless of the operation frequency. Transferring first and second sampled input data to a first path using a first path control signal. Transferring third and fourth sampled input data to a second path using a second path control signal. The first and second path control signals are one half-cycle out of phase. First to fourth data are successively sampled in synchronization with a rising or falling edge of a first external clock signal; The sampled first data is linked onto a first path and the sampled second data is linked onto a second path in response to the first path control signal (generated in synchronization with a falling edge of the external clock signal); the first data on the first path and the second data on the second path are written to the memory cells in response to a write clock signal.
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