发明申请
US20050157827A1 Method and circuit for writing double data rate (DDR) sampled data in a memory device 失效
用于在存储器件中写入双倍数据速率(DDR)采样数据的方法和电路

Method and circuit for writing double data rate (DDR) sampled data in a memory device
摘要:
A method and circuit for sampling and writing data in a double data rate (DDR) memory device, capable of securing sufficient setup and hold margins regardless of the operation frequency. Transferring first and second sampled input data to a first path using a first path control signal. Transferring third and fourth sampled input data to a second path using a second path control signal. The first and second path control signals are one half-cycle out of phase. First to fourth data are successively sampled in synchronization with a rising or falling edge of a first external clock signal; The sampled first data is linked onto a first path and the sampled second data is linked onto a second path in response to the first path control signal (generated in synchronization with a falling edge of the external clock signal); the first data on the first path and the second data on the second path are written to the memory cells in response to a write clock signal.
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