发明申请
US20050158996A1 Nickel salicide processes and methods of fabricating semiconductor devices using the same
审中-公开
镍硅化物工艺及使用其制造半导体器件的方法
- 专利标题： Nickel salicide processes and methods of fabricating semiconductor devices using the same
- 专利标题（中）： 镍硅化物工艺及使用其制造半导体器件的方法
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申请号： US10988848申请日： 2004-11-16
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公开(公告)号： US20050158996A1公开(公告)日： 2005-07-21
- 发明人: Min-Joo Kim , Ja-Hum Ku , Min-Chul Sun , Kwan-Jong Roh
- 申请人： Min-Joo Kim , Ja-Hum Ku , Min-Chul Sun , Kwan-Jong Roh
- 优先权： KR2003-81255 20031117
- 主分类号： H01L21/24
- IPC分类号： H01L21/24 ; H01L21/28 ; H01L21/285 ; H01L21/336 ; H01L29/78 ; H01L21/322
摘要：
A nickel salicide process includes preparing a substrate having a silicon region and an insulating region containing silicon. Nickel is deposited on the substrate, and the nickel is annealed at a first temperature of 300° C. to 380° C. to selectively form a mono-nickel mono-silicide layer on the silicon region and to leave an unreacted nickel layer on the insulating region. The unreacted nickel layer is selectively removed to expose the insulating region and to leave the mono-nickel mono-silicide layer on the silicon region. Subsequently, the mono-nickel mono-silicide layer is annealed at a second temperature which is higher than the first temperature to form a thermally stable mono-nickel mono-silicide layer and without a phase transition of the mono-nickel mono-silicide layer.
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