发明申请
- 专利标题： Gate electrode and manufacturing method thereof, and semiconductor device and manufacturing method thereof
- 专利标题（中）： 栅电极及其制造方法以及半导体装置及其制造方法
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申请号： US11062588申请日： 2005-02-23
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公开(公告)号： US20050159009A1公开(公告)日： 2005-07-21
- 发明人: Kozo Makiyama , Koji Nozaki
- 申请人： Kozo Makiyama , Koji Nozaki
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 优先权： JP2002-249390 20020828
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/28 ; H01L29/423 ; H01L21/302 ; H01L21/44 ; H01L21/461
摘要：
The present invention provides a method of manufacturing a gate electrode in which a fine gate electrode can effectively be manufactured by thickening a resist opening for gate electrodes formed by ordinary electron beam lithography so as to reduce opening dimensions. The method of manufacturing a gate electrode of the present invention includes a step of forming a laminated resist including at least an electron beam resist layer as a lowermost layer on a surface where a gate electrode is to be formed; a step of forming an opening in layer(s) other than the lowermost layer; a step of forming a gate electrode opening on the lowermost layer exposed from the opening; a step of reducing the gate electrode opening selectively; and a step of forming a gate electrode in the gate electrode opening.
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