发明申请
- 专利标题： High performance FET devices and methods thereof
- 专利标题（中）： 高性能FET器件及其方法
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申请号： US11065816申请日： 2005-02-25
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公开(公告)号： US20050161711A1公开(公告)日： 2005-07-28
- 发明人: Jack Oon Chu
- 申请人： Jack Oon Chu
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28 ; H01L21/336 ; H01L27/12 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/49 ; H01L29/778 ; H01L29/78 ; H01L29/786 ; H01L29/04 ; H01L31/036
摘要：
Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities in order to provide a preselected workfunction. It is further disclosed how this, and further improvements for FET devices, such as raised source/drain and multifaceted gate on insulator, MODFET on insulator are integrated with strained Si based layer on insulator technology.
公开/授权文献
- US07358122B2 High performance FET devices and methods thereof 公开/授权日：2008-04-15
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