发明申请
- 专利标题： One-time programmable memory cell
- 专利标题（中）： 一次性可编程存储单元
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申请号： US10504203申请日： 2003-02-11
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公开(公告)号： US20050162892A1公开(公告)日： 2005-07-28
- 发明人: Michel Bardouillet , Pierre Rizzo , Alexandre Malherbe , Luc Wuidart
- 申请人： Michel Bardouillet , Pierre Rizzo , Alexandre Malherbe , Luc Wuidart
- 优先权： FR02/01644 20020211; FR02/13557 20021029
- 国际申请： PCT/FR03/00447 WO 20030211
- 主分类号： G06F21/06
- IPC分类号： G06F21/06 ; G11C16/22 ; G11C17/14 ; H01L27/10 ; G11C11/00
摘要：
The invention relates to a memory cell with a binary value consisting of two parallel branches. Each of said branches comprises: at least one polycrystalline silicon programming resistor (Rp1, Rp2), which is connected between a first supply terminal (1) and a point or terminal for the differential reading (4, 6) of the memory cell state; and at least one first switch (MNP1, MNP2) which, during programming, connects one of said read terminals to a second supply terminal (2).
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