发明申请
- 专利标题： Semiconductor memory
- 专利标题（中）： 半导体存储器
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申请号： US11038025申请日： 2005-01-21
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公开(公告)号： US20050162954A1公开(公告)日： 2005-07-28
- 发明人: Ryuji Nishihara , Masashi Agata , Toshiaki Kawasaki , Masanori Shirahama
- 申请人： Ryuji Nishihara , Masashi Agata , Toshiaki Kawasaki , Masanori Shirahama
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 优先权： JP2004-016880 20040126
- 主分类号： G11C7/02
- IPC分类号： G11C7/02 ; G11C11/409 ; G11C11/419 ; G11C29/00 ; G11C29/50 ; H01L27/105
摘要：
In a normal operation, an output of a differential amplifier for amplifying a difference between first and second bit cells is output as readout data. In a test mode, when a first control signal is set to be “H”, the output of the differential amplifier is fixed to be “H” and thus an output of the first bit cell is read out through gates.
公开/授权文献
- US07050347B2 Semiconductor memory 公开/授权日：2006-05-23
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