发明申请
US20050167394A1 Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
有权
用于无定形碳（APF）的各种蚀刻和光刻积分方案的技术
- 专利标题： Techniques for the use of amorphous carbon (APF) for various etch and litho integration scheme
- 专利标题（中）： 用于无定形碳（APF）的各种蚀刻和光刻积分方案的技术
-
申请号： US10768724申请日： 2004-01-30
-
公开(公告)号： US20050167394A1公开(公告)日： 2005-08-04
- 发明人: Wei liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Chistopher Bencher
- 申请人： Wei liu , Jim He , Sang Ahn , Meihua Shen , Hichem M'Saad , Wendy Yeh , Chistopher Bencher
- 主分类号： H01L21/027
- IPC分类号： H01L21/027 ; H01L21/033 ; H01L21/308 ; H01L21/314 ; C23F1/00 ; B44C1/22 ; C03C15/00 ; C03C25/68
摘要：
A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
公开/授权文献
信息查询
IPC分类:
