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发明申请
US20050167645A1 Phase change memory devices including memory elements having variable cross-sectional areas 失效
相变存储器件包括具有可变横截面积的存储元件

Phase change memory devices including memory elements having variable cross-sectional areas
摘要：
A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.
摘要（中）：

相变存储器件可以包括第一和第二间隔开的导电电极，以及耦合在第一和第二导电电极之间的相变存储元件。 更具体地，相变存储元件的第一部分可以具有沿着第一和第二导电电极之间的电流路径的第一横截面积，并且相变存储元件的第二部分可以具有第二横截面积， 沿着第一和第二导电电极之间的电流路径的截面积。 此外，第一和第二横截面积可以不同。

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