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16 条记录 (耗时 0.064 秒)

    Deposition apparatus
    7.
    发明申请
    Deposition apparatus 审中-公开
    沉积装置

    公开(公告)号：US20060272561A1

    公开(公告)日：2006-12-07

    申请号：US11445346

    申请日：2006-06-02

    申请人： Kyu-Baik Chang ,  Tai-Kyung Kim ,  Jae-Hyun Han ,  Won-Young Chung ,  Hyung-Kyu Kim

    发明人： Kyu-Baik Chang ,  Tai-Kyung Kim ,  Jae-Hyun Han ,  Won-Young Chung ,  Hyung-Kyu Kim

    IPC分类号： A01C7/00 ,  A01C9/00

    CPC分类号： H01L21/68735 ,  H01L21/68721

    摘要： A deposition apparatus may include a deposition-preventing member for preventing deposition of process gas on a portion of substrate removeably arranged inside a processing chamber. The deposition-preventing member may include a fixing member for fixing the deposition preventing member to a fixed body of the processing chamber, a blocking member for blocking the to-be-blocked portion of the substrate to be processed, and a guiding member for guiding fluid and particles out from the processing chamber, the guiding member may include a guiding surface that prevents a vortex from forming on the deposition-preventing member when fluid and particles are flowing out of the processing chamber.

    摘要翻译： 沉积设备可以包括用于防止处理气体沉积在可移除地布置在处理室内的基板的一部分上的防沉积构件。 防沉积构件可以包括用于将防沉积构件固定到处理室的固定体的固定构件，用于阻挡待处理基板的待封闭部分的阻挡构件和用于引导 流体和颗粒从处理室排出，引导构件可以包括引导表面，当引导流体和颗粒流出处理室时，引导表面防止在防沉积构件上形成涡流。

    Phase change memory devices including memory elements having variable cross-sectional areas
    8.
    发明授权
    Phase change memory devices including memory elements having variable cross-sectional areas 失效
    相变存储器件包括具有可变横截面积的存储元件

    公开(公告)号：US07042001B2

    公开(公告)日：2006-05-09

    申请号：US11017594

    申请日：2004-12-20

    申请人： Young-tae Kim ,  Young-nam Hwang ,  Tai-kyung Kim ,  Won-young Chung ,  Keun-ho Lee

    发明人： Young-tae Kim ,  Young-nam Hwang ,  Tai-kyung Kim ,  Won-young Chung ,  Keun-ho Lee

    IPC分类号： H01L47/00 ,  H01L29/04

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/144

    摘要： A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

    摘要翻译： 相变存储器件可以包括第一和第二间隔开的导电电极，以及耦合在第一和第二导电电极之间的相变存储元件。 更具体地，相变存储元件的第一部分可以具有沿着第一和第二导电电极之间的电流路径的第一横截面积，并且相变存储元件的第二部分可以具有第二横截面积， 沿着第一和第二导电电极之间的电流路径的截面积。 此外，第一和第二横截面积可以不同。