发明申请
US20050167655A1 Vertical nanotube semiconductor device structures and methods of forming the same
审中-公开
垂直纳米管半导体器件结构及其形成方法
- 专利标题: Vertical nanotube semiconductor device structures and methods of forming the same
- 专利标题(中): 垂直纳米管半导体器件结构及其形成方法
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申请号: US10767065申请日: 2004-01-29
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公开(公告)号: US20050167655A1公开(公告)日: 2005-08-04
- 发明人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人: Toshiharu Furukawa , Mark Hakey , Steven Holmes , David Horak , Charles Koburger , Peter Mitchell , Larry Nesbit
- 申请人地址: US NY ARMONK
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY ARMONK
- 主分类号: B82B1/00
- IPC分类号: B82B1/00 ; B82B3/00 ; H01L27/28 ; H01L51/05 ; H01L51/30 ; H01L51/40 ; H01L29/06
摘要:
Vertical device structures incorporating at least one nanotube and methods for fabricating such device structures by chemical vapor deposition. Each nanotube is grown by chemical vapor deposition catalyzed by a catalyst pad and encased in a coating of a dielectric material. Vertical field effect transistors may be fashioned by forming a gate electrode about the encased nanotubes such that the encased nanotubes extend vertically through the thickness of the gate electrode. Capacitors may be fashioned in which the encased nanotubes and the corresponding catalyst pad bearing the encased nanotubes forms one capacitor plate.