发明申请
US20050167664A1 Thyristor-based SRAM 有权
基于晶闸管的SRAM

Thyristor-based SRAM
摘要:
An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal semiconductor fin. An access transistor is at least a portion of the horizontal semiconductor fin and the access transistor gate. A thyristor is at least a portion of the horizontal semiconductor fin and the thyristor gate, the access transistor is in contact with the thyristor.
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