发明申请
- 专利标题: Thyristor-based SRAM
- 专利标题(中): 基于晶闸管的SRAM
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申请号: US11077731申请日: 2005-03-10
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公开(公告)号: US20050167664A1公开(公告)日: 2005-08-04
- 发明人: Elgin Quek , Jia Zheng , Pradeep Yelehanka , Weining Li
- 申请人: Elgin Quek , Jia Zheng , Pradeep Yelehanka , Weining Li
- 申请人地址: SG Singapore 738406
- 专利权人: Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人: Chartered Semiconductor Manufacturing, Ltd.
- 当前专利权人地址: SG Singapore 738406
- 主分类号: H01L21/336
- IPC分类号: H01L21/336 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L29/76
摘要:
An integrated circuit structure includes a semiconductor substrate and a horizontal semiconductor fin on top of the semiconductor substrate. An access transistor gate and a thyristor gate are on top of the semiconductor substrate and in contact with the horizontal semiconductor fin. An access transistor is at least a portion of the horizontal semiconductor fin and the access transistor gate. A thyristor is at least a portion of the horizontal semiconductor fin and the thyristor gate, the access transistor is in contact with the thyristor.
公开/授权文献
- US07285804B2 Thyristor-based SRAM 公开/授权日:2007-10-23
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