发明申请
- 专利标题： Magnetic memory device having magnetic shield layer, and manufacturing method thereof
- 专利标题（中）： 具有磁屏蔽层的磁存储器件及其制造方法
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申请号： US11070379申请日： 2005-03-03
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公开(公告)号： US20050169044A1公开(公告)日： 2005-08-04
- 发明人: Keiji Hosotani
- 申请人： Keiji Hosotani
- 优先权： JP2001-384793 20011218
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; F16K25/00 ; G11C11/00 ; G11C11/02 ; H01L21/8246 ; H01L27/00 ; H01L27/22 ; H01L29/76 ; H01L29/94
摘要：
A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the first direction, and a first magnetic shield layer which is formed on the side surface of each second wiring layer and formed around the side surface of the memory element.
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