发明申请
- 专利标题： Plasma processing method and apparatus
- 专利标题（中）： 等离子体处理方法和装置
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申请号： US10935312申请日： 2004-09-08
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公开(公告)号： US20050170669A1公开(公告)日： 2005-08-04
- 发明人: Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
- 申请人： Tomohiro Okumura , Ichiro Nakayama , Satoshi Maeshima , Bunji Mizuno , Yuichiro Sasaki
- 优先权： JP2003-315414 20030908
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/223 ; H01L21/26 ; B05B5/025 ; B05C5/00 ; H01L21/324 ; H01L21/42 ; H01L21/477
摘要：
With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.
公开/授权文献
- US07199064B2 Plasma processing method and apparatus 公开/授权日：2007-04-03
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