发明申请
- 专利标题： Well for CMOS imager and method of formation
- 专利标题（中）： 好的CMOS成像器和形成方法
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申请号： US11105419申请日： 2005-04-14
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公开(公告)号： US20050179059A1公开(公告)日： 2005-08-18
- 发明人: Howard Rhodes , Inna Patrick , Richard Mauritzson
- 申请人： Howard Rhodes , Inna Patrick , Richard Mauritzson
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/10 ; H01L27/146
摘要：
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
公开/授权文献
- US07635604B2 Well for CMOS imager and method of formation 公开/授权日：2009-12-22
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