发明申请
- 专利标题： Method for doping impurities, methods for producing semiconductor device and applied electronic apparatus
- 专利标题（中）： 掺杂杂质的方法，制造半导体器件的方法和应用的电子设备
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申请号： US11039996申请日： 2005-01-24
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公开(公告)号： US20050181566A1公开(公告)日： 2005-08-18
- 发明人: Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
- 申请人： Akio Machida , Takahiro Kamei , Yoshiyuki Kawana
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-034608 20040212; JP2004-070493 20040312
- 主分类号： H01L21/225
- IPC分类号： H01L21/225 ; H01L21/20 ; H01L21/22 ; H01L21/336 ; H01L21/38 ; H01L21/77 ; H01L29/786
摘要：
A solution containing impurity ions is applied onto the surface of a silicon film to form a solution layer, followed by drying into a compound layer containing the impurities. Heat treatment is performed by irradiation with an energy beam so as to diffuse the impurity atoms in the compound layer toward the silicon film into a source region and a drain region. Subsequently, the compound layer is removed.
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