发明申请
US20050186487A1 Halftone phase shift mask blank, halftone phase shift mask and their preparation
有权
半色调相移掩模空白,半色调相移掩模及其制备
- 专利标题: Halftone phase shift mask blank, halftone phase shift mask and their preparation
- 专利标题(中): 半色调相移掩模空白,半色调相移掩模及其制备
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申请号: US11062438申请日: 2005-02-23
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公开(公告)号: US20050186487A1公开(公告)日: 2005-08-25
- 发明人: Yukio Inazuki , Hiroki Yoshikawa , Satoshi Okazaki
- 申请人: Yukio Inazuki , Hiroki Yoshikawa , Satoshi Okazaki
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 优先权: JP2004-047483 20040224
- 主分类号: G03C5/00
- IPC分类号: G03C5/00 ; G03F1/32 ; G03F1/68 ; G03F1/80 ; G03F9/00 ; H01L21/027
摘要:
In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm2. The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F2 laser beam (193 or 157 nm).
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