发明申请
US20050186487A1 Halftone phase shift mask blank, halftone phase shift mask and their preparation 有权
半色调相移掩模空白,半色调相移掩模及其制备

Halftone phase shift mask blank, halftone phase shift mask and their preparation
摘要:
In a halftone phase shift mask blank comprising a halftone phase shift film on a substrate which is transparent to exposure light, the halftone phase shift film comprises a metal, silicon, and optionally oxygen and nitrogen. The halftone phase shift film experiences a phase difference change of up to 1 deg. and a transmittance change of up to 0.2% before and after it is exposed to light in a cumulative dose of 1 kJ/cm2. The halftone phase shift film has excellent resistance to exposure light, specifically high-energy exposure light of short wavelength such as ArF or F2 laser beam (193 or 157 nm).
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