Invention Application
US20050186720A1 Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
有权
使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
- Patent Title: Method of fabricating polysilicon thin film and thin film transistor using polysilicon fabricated by the same method
- Patent Title (中): 使用同样方法制造的多晶硅薄膜晶体管和多晶硅晶体管的制造方法
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Application No.: US11033493Application Date: 2005-01-12
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Publication No.: US20050186720A1Publication Date: 2005-08-25
- Inventor: Ramesh Kakkad
- Applicant: Ramesh Kakkad
- Priority: KR2004-11146 20040219
- Main IPC: H01L21/205
- IPC: H01L21/205 ; C30B1/02 ; C30B29/06 ; H01L21/20 ; H01L21/324 ; H01L21/336 ; H01L29/786 ; H01L21/00 ; C30B1/00 ; H01L21/84 ; H01L21/36
Abstract:
A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H2O atmosphere. Accordingly, the crystallization temperature and thermal treatment time are decreased when the amorphous silicon is crystallized by a solid phase crystallization method, and this prevents the substrate from being bent due to application of a thermal treatment process for a long time and at a high temperature. As a result of the invention, a polysilicon thin film having superior crystallization properties is obtained. Use of the polysilicon thin film in a thin film transistor results in the reduction of defects in the thin film resistor.
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