- 专利标题： Methods of fabricating interconnects for semiconductor components
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申请号： US11028918申请日： 2005-01-03
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公开(公告)号： US20050186777A1公开(公告)日： 2005-08-25
- 发明人: Kyle Kirby , Shuang Meng , Garo Derderian
- 申请人： Kyle Kirby , Shuang Meng , Garo Derderian
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48 ; H01L23/52
摘要：
In one aspect, the invention encompasses a method of fabricating an interconnect for a semiconductor component. A semiconductor substrate is provided, and an opening is formed which extends entirely through the substrate. A first material is deposited along sidewalls of the opening at a temperature of less than or equal to about 200° C. The deposition can comprise one or both of atomic layer deposition and chemical vapor deposition, and the first material can comprise a metal nitride. A solder-wetting material is formed over a surface of the first material. The solder-wetting material can comprise, for example, nickel. Subsequently, solder is provided within the opening and over the solder-wetting material.
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