发明申请
- 专利标题： PLASMA PROCESSING APPARATUS AND PROCESSING METHOD
- 专利标题（中）： 等离子体加工设备和加工方法
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申请号： US10875213申请日： 2004-06-25
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公开(公告)号： US20050189070A1公开(公告)日： 2005-09-01
- 发明人: Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
- 申请人： Junichi Tanaka , Hiroyuki Kitsunai , Hideyuki Yamamoto , Shoji Ikuhara , Akira Kagoshima
- 优先权： JP2004-054229 20040227
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; C23F1/00 ; H01L21/00 ; H01L21/26 ; H01L21/306
摘要：
The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel 1a constituting the processing chamber 1, process gas supply devices 3, 4 for supplying processing gas to the processing chamber 1, and a plasma generating means 2 for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit 15 for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.
公开/授权文献
- US06939435B1 Plasma processing apparatus and processing method 公开/授权日：2005-09-06
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