发明申请
- 专利标题： Sealed three dimensional metal bonded integrated circuits
- 专利标题（中）： 密封三维金属接合集成电路
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申请号： US10791492申请日： 2004-03-01
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公开(公告)号： US20050189632A1公开(公告)日： 2005-09-01
- 发明人: Patrick Morrow , Grant Kloster
- 申请人： Patrick Morrow , Grant Kloster
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L21/56 ; H01L23/02 ; H01L23/31 ; H01L23/48 ; H01L25/065
摘要：
The invention provides a sealing layer that seals metal bonding structures between three dimensional bonded integrated circuits from a surrounding environment. A material may be applied to fill a volume between the bonded integrated circuits or seal the perimeter of the volume between the bonded integrated circuits. The material may be the same material as that used for underfilling the volume between the bottom integrated circuit and a substrate.
公开/授权文献
- US07217595B2 Sealed three dimensional metal bonded integrated circuits 公开/授权日：2007-05-15