发明申请
- 专利标题： Integrated semiconductor memory and method for electrically stressing an integrated semiconductor memory
- 专利标题（中）： 集成半导体存储器和用于电应力集成半导体存储器的方法
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申请号： US11061087申请日： 2005-02-18
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公开(公告)号： US20050194614A1公开(公告)日： 2005-09-08
- 发明人: Georg Eggers , Stephan Schroder , Manfred Proll , Herbert Benzinger
- 申请人： Georg Eggers , Stephan Schroder , Manfred Proll , Herbert Benzinger
- 优先权： DE102004008245.6 20040219
- 主分类号： G11C11/407
- IPC分类号： G11C11/407 ; G11C29/00 ; G11C29/02 ; H01L21/66 ; H01L21/8242 ; H01L27/10 ; H01L27/105 ; H01L29/73 ; H01L29/739 ; H01L29/74
摘要：
Semiconductor memories (1) have segmented word lines (5a, 5b), which in each case have a main word line (10a, 10b) made of a conductive metal and a plurality of interconnect segments (15a, 15b) coupled to the main word line (10a, 10b), which are coupled to the respective main word line (10a, 10b) in each case via at least one contact hole filling (11). If one of the contact hole fillings (11) is defective or at high resistance then functional errors of the semiconductor memory occur. The interconnect segments (15a, 15b) of two respective word lines (5a, 5b) can be short-circuited in pairs with the aid of switching units (20), whereby a static current (I) that flows via the contact hole fillings (11) can be used for electrically stressing the contact hole fillings (11). Electrical stressing of contact hole fillings of segmented word lines is thus made possible.