A nonvolatile semiconductor memory device to be manufactured at a high production yield has memory cells disposed in a highly integrated manner by suppressing the occurrence of dislocation typically caused by such highly integrated disposition of the memory cells. In order to achieve is result, each field shielding transistor is formed in a select transistor region having a small isolation width, and 0 V is applied to a gate of the field shielding transistor to isolate each local bit line from the others. The gate of each field shielding transistor is connected to another one with a gate member, so that the layout area is reduced more than when a contact hole is provided directly at the gate of each field shielding transistor.