发明申请
US20050196928A1 Method of reducing STI divot formation during semiconductor device fabrication
有权
在半导体器件制造期间减少STI纹路形成的方法
- 专利标题： Method of reducing STI divot formation during semiconductor device fabrication
- 专利标题（中）： 在半导体器件制造期间减少STI纹路形成的方法
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申请号： US10791759申请日： 2004-03-04
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公开(公告)号： US20050196928A1公开(公告)日： 2005-09-08
- 发明人: Douglas Bonser , Johannes Groschopf , Srikanteswara Dakshina-Murthy , John Pellerin , Jon Cheek
- 申请人： Douglas Bonser , Johannes Groschopf , Srikanteswara Dakshina-Murthy , John Pellerin , Jon Cheek
- 专利权人： ADVANCED MICRO DEVICES, INC.
- 当前专利权人： ADVANCED MICRO DEVICES, INC.
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/762 ; H01L21/336
摘要：
STI divot formation is eliminated or substantially reduced by employing a very thin nitride polish stop layer, e.g., no thicker than 400 Å. The very thin nitride polish stop layer is retained in place during subsequent masking, implanting and cleaning steps to form dopant regions, and is removed prior to gate oxide and gate electrode formation.
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