发明申请
US20050196939A1 Method and apparatus of fabricating a semiconductor device by back grinding and dicing
失效
通过背面研磨和切割制造半导体器件的方法和装置
- 专利标题： Method and apparatus of fabricating a semiconductor device by back grinding and dicing
- 专利标题（中）： 通过背面研磨和切割制造半导体器件的方法和装置
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申请号： US10984843申请日： 2004-11-10
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公开(公告)号： US20050196939A1公开(公告)日： 2005-09-08
- 发明人: Sang-Yeop Lee , Cheul-Joong Youn
- 申请人： Sang-Yeop Lee , Cheul-Joong Youn
- 优先权： KR2004-14248 20040303
- 主分类号： H01L21/78
- IPC分类号： H01L21/78 ; H01L21/301 ; H01L21/44 ; H01L21/46 ; H01L21/48 ; H01L21/50
摘要：
A method and apparatus of fabricating a semiconductor device by back grinding and dicing is disclosed. The method may include at least adhering a protection tape for back grinding on a front surface of a semiconductor wafer, back grinding a rear surface of the semiconductor wafer while the protection tape faces downward, loading the semiconductor wafer to dicing equipment when the front surface having the protection tape faces downward, detecting a dicing position formed on the front surface of the semiconductor wafer, and dicing the semiconductor wafer with the protection tape adhering thereon into individual semiconductor chips in accordance with the detected dicing position. The dicing equipment may have a transparent aligning part for aligning the semiconductor wafer and a chuck part for supporting the semiconductor wafer.
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