Invention Application
US20050196955A1 Method to increase mechanical fracture robustness of porous low k dielectric materials
有权
增加多孔低介电常数材料的机械断裂稳定性的方法
- Patent Title: Method to increase mechanical fracture robustness of porous low k dielectric materials
- Patent Title (中): 增加多孔低介电常数材料的机械断裂稳定性的方法
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Application No.: US11114563Application Date: 2005-04-25
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Publication No.: US20050196955A1Publication Date: 2005-09-08
- Inventor: Ting Tsui , Andrew McKerrow , Jeannette Jacques
- Applicant: Ting Tsui , Andrew McKerrow , Jeannette Jacques
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/4763
Abstract:
The present invention provides an insulating layer 100 for an integrated circuit 110 comprising a porous silicon-based dielectric layer 120 located over a substrate 130. The insulating layer comprises a densified layer 140 comprising an uppermost portion 142 of the porous silicon-based dielectric layer.
Public/Granted literature
- US07342315B2 Method to increase mechanical fracture robustness of porous low k dielectric materials Public/Granted day:2008-03-11
Information query
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