发明申请
US20050199872A1 Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication
审中-公开
具有可变硅 - 锗组成的硅 - 锗薄层半导体结构及其制造方法
- 专利标题： Silicon-germanium thin layer semiconductor structure with variable silicon-germanium composition and method of fabrication
- 专利标题（中）： 具有可变硅 - 锗组成的硅 - 锗薄层半导体结构及其制造方法
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申请号： US10797425申请日： 2004-03-10
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公开(公告)号： US20050199872A1公开(公告)日： 2005-09-15
- 发明人: Pradip Roy , Anthony Dip , Allen Leith , Seungho Oh
- 申请人： Pradip Roy , Anthony Dip , Allen Leith , Seungho Oh
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited of TBS Broadcast Center
- 当前专利权人： Tokyo Electron Limited of TBS Broadcast Center
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/20 ; H01L21/205 ; H01L21/28 ; H01L29/161 ; H01L29/49 ; H01L29/06
摘要：
A SiGe thin layer semiconductor structure containing a substrate having a dielectric layer, a variable composition SixGe1-x layer on dielectric layer, and a Si cap layer on the variable composition SixGe1-x layer. The variable composition SixGe1-x layer can contain a SixGe1-x layer with a graded Ge content or a plurality of SixGe1-x sub-layers each with different Ge content. In one embodiment of the invention, the SiGe thin layer semiconductor structure contains a semiconductor substrate having a dielectric layer, a Si-containing seed layer on the dielectric layer, a variable composition SixGe1-x layer on the seed layer, and a Si cap layer on the variable composition SixGe1-x layer. A method and processing tool for fabricating the SiGe thin layer semiconductor structure are also provided.