发明申请
US20050200234A1 Surface acoustic wave element, surface acoustic wave device, duplexer, and method of making surface acoustic wave element
有权
表面声波元件,表面声波器件,双工器,以及制造声表面波元件的方法
- 专利标题: Surface acoustic wave element, surface acoustic wave device, duplexer, and method of making surface acoustic wave element
- 专利标题(中): 表面声波元件,表面声波器件,双工器,以及制造声表面波元件的方法
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申请号: US11071303申请日: 2005-03-04
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公开(公告)号: US20050200234A1公开(公告)日: 2005-09-15
- 发明人: Masaki Sobu , Katsunori Osanai
- 申请人: Masaki Sobu , Katsunori Osanai
- 申请人地址: JP Tokyo
- 专利权人: TDK Corporation
- 当前专利权人: TDK Corporation
- 当前专利权人地址: JP Tokyo
- 优先权: JP2004-066276 20040309
- 主分类号: H01L41/09
- IPC分类号: H01L41/09 ; H01L41/18 ; H01L41/22 ; H01L41/29 ; H01L41/39 ; H01L41/41 ; H03H3/08 ; H03H9/02 ; H03H9/10 ; H03H9/145 ; H03H9/25 ; H03H9/72
摘要:
A surface acoustic wave element, a surface acoustic wave device, a duplexer, and a method of making a surface acoustic wave element which significantly restrain characteristics from deteriorating are provided. The surface acoustic wave element in accordance with the present invention comprises a piezoelectric substrate, and an IDT electrode formed on the piezoelectric substrate, whereas the piezoelectric substrate has a volume resistivity of not less than 3.6×1010 Ω·cm and not more than 1.5×1014 Ω·cm. This surface acoustic wave element comprises the piezoelectric substrate having a low volume resistivity, whereas the volume resistivity is reduced to 1.5×1014 Ω·cm or less. Therefore, discharging is restrained from occurring between IDT electrodes, whereby characteristics are significantly kept from deteriorating. Also, since the volume resistivity of the piezoelectric substrate is not less than 3.6×1010 Ω·cm, the IDT electrodes are significantly prevented from short-circuiting with each other.
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