发明申请
- 专利标题： Method for analyzing impurities
- 专利标题（中）： 杂质分析方法
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申请号： US11080469申请日： 2005-03-16
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公开(公告)号： US20050208674A1公开(公告)日： 2005-09-22
- 发明人: Kaori Tokushima , Yoshihiro Kawabata
- 申请人： Kaori Tokushima , Yoshihiro Kawabata
- 申请人地址： JP Tokyo
- 专利权人： Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人： Sumitomo Mitsubishi Silicon Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2004-081217 20040319
- 主分类号： G01N1/28
- IPC分类号： G01N1/28 ; B08B3/12 ; H01L21/00
摘要：
The impurity analyzing method is for analyzing impurities that exist on a surface of a semiconductor wafer, which includes a step of bubbling a mixed solution including hydrofluoric acid and aqueous hydrogen peroxide or a mixed solution including hydrofluoric acid and aqueous ozone to generate a vapor including hydrofluoric acid and aqueous hydrogen peroxide or a vapor including hydrofluoric acid and aqueous ozone, a step of dissolving a film formed on the surface of the semiconductor wafer by means of the vapor including hydrofluoric acid and aqueous hydrogen peroxide or the vapor including hydrofluoric acid and aqueous ozone, a step of supplying liquid drops onto the surface of the semiconductor wafer and collecting the impurities along with the liquid drops, and a step of analyzing the collected impurities.
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