发明申请
US20050208753A1 Dual-damascene interconnects without an etch stop layer by alternating ILDs
审中-公开
通过交替的ILD，不需要蚀刻停止层的双镶嵌互连
- 专利标题： Dual-damascene interconnects without an etch stop layer by alternating ILDs
- 专利标题（中）： 通过交替的ILD，不需要蚀刻停止层的双镶嵌互连
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申请号： US11131740申请日： 2005-05-17
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公开(公告)号： US20050208753A1公开(公告)日： 2005-09-22
- 发明人: Andrew Ott , Lawrence Wong , Patrick Morrow , Jihperng Leu , Grant Kloster
- 申请人： Andrew Ott , Lawrence Wong , Patrick Morrow , Jihperng Leu , Grant Kloster
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/532 ; H01L21/4763
摘要：
A dual-damascene process where first alternate ILDs are made of a first material and second alternate ILDs are made of a second material. Each material is etchable at a faster rate than the other in the presence of different etchant such as for an organic polymer and an inorganic low k material. This allows the ILDs to be deposited alternately on one another without an etchant stop layer thereby reducing capacitance.