发明申请
- 专利标题： Metal-insulator-metal capacitors
- 专利标题（中）： 金属绝缘体金属电容器
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申请号： US10811409申请日： 2004-03-26
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公开(公告)号： US20050212021A1公开(公告)日： 2005-09-29
- 发明人: Kuo-Chi Tu , Wai-Yi Lien
- 申请人： Kuo-Chi Tu , Wai-Yi Lien
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/8242 ; H01L27/108
摘要：
A metal-insulator-metal (MIM) capacitor is provided. The bottom electrode of the MIM capacitor is electrically connected to a connection node. The connection node may be, for example, a contact formed in an interlayer dielectric, a polysilicon connection node, a doped polysilicon or silicon region, or the like. A contact provides an electrical connection between the connection node and components formed above the connection node. A second contact provides an electrical connection to the top electrode.
公开/授权文献
- US07195970B2 Metal-insulator-metal capacitors 公开/授权日：2007-03-27