- 专利标题： Angled implant for shorter trench emitter
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申请号： US11137040申请日： 2005-05-24
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公开(公告)号： US20050212039A1公开(公告)日： 2005-09-29
- 发明人: Richard Francis , Chiu Ng
- 申请人： Richard Francis , Chiu Ng
- 专利权人： International Rectifier Corporation
- 当前专利权人： International Rectifier Corporation
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/331 ; H01L21/336 ; H01L29/08 ; H01L29/739 ; H01L29/78 ; H01L31/062
摘要：
An insulated gate trench type semiconductor device having L-shaped diffused regions, each diffused region having a vertically oriented portion and a horizontally oriented portion extending laterally from the vertically oriented portion, and a method for manufacturing the device in which the vertically oriented portion of each L-shaped diffused region is formed by directing dopants at an angle toward a sidewall of a trench to form the vertically oriented portion using the edge of the opposing sidewall of the trench as a mask.
公开/授权文献
- US07335947B2 Angled implant for shorter trench emitter 公开/授权日：2008-02-26
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