发明申请
- 专利标题： Nanowire varactor diode and methods of making same
- 专利标题（中）： 纳米线变容二极管及其制作方法
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申请号： US10806361申请日： 2004-03-23
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公开(公告)号： US20050212079A1公开(公告)日： 2005-09-29
- 发明人: David Stumbo , Jian Chen , David Heald , Yaoling Pan
- 申请人： David Stumbo , Jian Chen , David Heald , Yaoling Pan
- 专利权人： NANOSYS, Inc.
- 当前专利权人： NANOSYS, Inc.
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/93
摘要：
A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.
公开/授权文献
- US07115971B2 Nanowire varactor diode and methods of making same 公开/授权日：2006-10-03
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