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    Artificial dielectrics using nanostructures
    3.
    发明申请
    Artificial dielectrics using nanostructures 失效
    使用纳米结构的人造电介质

    公开(公告)号：US20070296032A1

    公开(公告)日：2007-12-27

    申请号：US11203432

    申请日：2005-08-15

    Applicant: David Stumbo ,  Stephen Empedocles ,  Francisco Leon ,  J. Parce

    Inventor： David Stumbo ,  Stephen Empedocles ,  Francisco Leon ,  J. Parce

    IPC: H01L27/12

    CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01L29/0673 ,  H01L29/4908 ,  H01L51/0537 ,  Y10S977/743 ,  Y10S977/745 ,  Y10S977/762 ,  Y10S977/813 ,  Y10S977/936

    Abstract: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials

    Abstract translation: 公开了使用纳米结构的人造电介质，例如纳米线。 在实施例中，公开了使用其他纳米结构的人造电介质，例如纳米棒，纳米管或纳米带等。 人造电介质包括具有嵌入电介质材料内的多个纳米线（或其他纳米结构）的电介质材料。 使用纳米结构的人造电介质可以实现非常高的介电常数。 可以通过改变纳米结构的长度，直径，载流子密度，形状，纵横比，取向和密度来调节介电常数。 此外，公开了使用纳米结构的可控人造电介质，例如纳米线，其中可以通过向可控人造电介质施加电场来动态地调整介电常数。 各种电子器件可以使用具有纳米结构的人造电介质来提高性能。 示例性器件包括电容器，薄膜晶体管，其他类型的薄膜电子器件，微带器件，表面声波（SAW）滤波器，其它类型的滤波器以及雷达衰减材料

    Nanowire varactor diode and methods of making same
    5.
    发明申请
    Nanowire varactor diode and methods of making same 有权
    纳米线变容二极管及其制作方法

    公开(公告)号：US20050212079A1

    公开(公告)日：2005-09-29

    申请号：US10806361

    申请日：2004-03-23

    Applicant: David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    Inventor： David Stumbo ,  Jian Chen ,  David Heald ,  Yaoling Pan

    IPC: H01L29/06 ,  H01L29/93

    CPC classification number: B82Y10/00 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/93 ,  Y10S977/762

    Abstract: A nanowire varactor diode and methods of making the same are disclosed. The structure comprises a coaxial capacitor running the length of the semiconductor nanowire. In one embodiment, a semiconductor nanowire of a first conductivity type is deposited on a substrate. An insulator is formed on at least a portion of the nanowire's surface. A region of the nanowire is doped with a second conductivity type material. A first electrical contact is formed on at least part of the insulator and the doped region. A second electrical contact is formed on a non-doped potion of the nanowire. During operation, the conductivity type at the surface of the nanowire inverts and a depletion region is formed upon application of a voltage to the first and second electrical contacts. The varactor diode thereby exhibits variable capacitance as a function of the applied voltage.

    Abstract translation: 公开了一种纳米线变容二极管及其制造方法。 该结构包括运行半导体纳米线长度的同轴电容器。 在一个实施例中，第一导电类型的半导体纳米线沉积在衬底上。 在纳米线表面的至少一部分上形成绝缘体。 纳米线的区域掺杂有第二导电类型的材料。 在绝缘体和掺杂区域的至少一部分上形成第一电接触。 在纳米线的非掺杂药液上形成第二电接触。 在操作期间，纳米线表面的导电类型反转，并且在向第一和第二电触点施加电压时形成耗尽区。 因此，变容二极管作为施加电压的函数呈现可变电容。

    Deflection noise reduction in charged particle beam lithography
    7.
    发明授权
    Deflection noise reduction in charged particle beam lithography 失效
    带电粒子束光刻中的偏转噪声降低

    公开(公告)号：US06521903B1

    公开(公告)日：2003-02-18

    申请号：US09348481

    申请日：1999-07-07

    Applicant: James Rockrohr ,  David Stumbo

    Inventor： James Rockrohr ,  David Stumbo

    IPC: H01J37147

    CPC classification number: H01J37/1474 ,  H01J2237/1504 ,  H01J2237/3175

    Abstract: A common deflection signal is provided, simultaneously, to individual yokes in an electron beam (e-beam) deflection apparatus of an electron beam projection lithography system. A single digital-to-analog converter (DAC) generates the common deflection signal. The common deflection signal is provided to individual programmable attenuators to adjust the signal for each individual yoke. The adjusted individual signal is amplified and passed to one of the individual yokes. The yokes are controlled to provide a curvilinear variable axis lens (CVAL) deflection that is adjusted to attenuate most of the noise from the common deflection signal that would have been present in a typical CVAL e-beam system.

    Abstract translation: 公共偏转信号同时被提供给电子束投影光刻系统的电子束（e-beam）偏转装置中的各个轭。 单个数模转换器（DAC）产生公共偏转信号。 公共偏转信号被提供给单独的可编程衰减器以调整每个单独磁轭的信号。 经调整的单独信号被放大并传递到单独的轭中的一个。 磁轭被控制以提供曲线可变轴透镜（CVAL）偏转，其被调节以衰减来自常见的偏转信号的大部分噪声，这将会存在于典型的CVAL电子束系统中。

    Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays
    9.
    发明申请
    Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays 有权
    具有纳米功能的存储器件和各向异性电荷携带阵列

    公开(公告)号：US20070187768A1

    公开(公告)日：2007-08-16

    申请号：US11695728

    申请日：2007-04-03

    Applicant: Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    Inventor： Xiangfeng Duan ,  Calvin Chow ,  David Heald ,  Chunming Niu ,  J. Parce ,  David Stumbo

    IPC: H01L29/94

    CPC classification number: H01L21/28273 ,  B82Y10/00 ,  G03G5/00 ,  G03G5/02 ,  G03G5/04 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  G03G5/08214 ,  G11C11/56 ,  G11C13/02 ,  G11C13/025 ,  G11C2213/17 ,  G11C2213/18 ,  G11C2216/08 ,  H01L29/42332 ,  H01L29/7881 ,  H01L29/7887 ,  Y10S977/774 ,  Y10S977/785 ,  Y10S977/936

    Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device. In a multistate memory device which comprises one or more quantum dots or molecules having a plurality of discrete energy levels, a method is disclosed for charging and/or discharging the device which comprises filling each of the plurality of discrete energy levels of each dot or molecule with one or more electrons, and subsequently removing individual electrons at a time from each discrete energy level of the one or more dots or molecules.

    Abstract translation: 描述了用于纳米存储器件和各向异性带电载体阵列的方法和装置。 在一方面，存储器件包括衬底，衬底的源极区域和衬底的漏极区域。 纳米元素的群体沉积在通道区域上方的衬底上，在一个实施方案中纳米的群体包括金属量子点。 隧道介电层形成在覆盖沟道区的衬底上，金属迁移势垒层沉积在电介质层上。 在纳米元件的薄膜上形成栅极接触。 纳米元件允许减少横向电荷转移。 存储器件可以是单个或多个存储器件。 在包括具有多个离散能级的一个或多个量子点或分子的多状态存储器件中，公开了一种用于对该器件进行充电和/或放电的方法，该方法包括填充每个点或分子的多个离散能级中的每一个 与一个或多个电子，并随后从一个或多个点或分子的每个离散能级一次去除单个电子。

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