发明申请
- 专利标题： Thin-film piezoelectric element and method of making same
- 专利标题（中）： 薄膜压电元件及其制造方法
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申请号： US11078565申请日： 2005-03-14
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公开(公告)号： US20050212389A1公开(公告)日： 2005-09-29
- 发明人: Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
- 申请人： Kenichi Tochi , Takao Noguchi , Hiroshi Yamazaki , Ken Unno , Masahiro Miyazaki , Shigeru Shoji
- 申请人地址： JP Tokyo
- 专利权人： TDK CORPORATION
- 当前专利权人： TDK CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-096674 20040329
- 主分类号： H01L41/083
- IPC分类号： H01L41/083 ; H01L41/047 ; H01L41/18 ; H01L41/187 ; H01L41/22 ; H01L41/29 ; H01L41/313 ; H01L41/316
摘要：
Provided is a thin-film piezoelectric element which reduces the influence of an oxide film left on the electrode film on the degradation of element characteristics, and a method of making the thin-film piezoelectric element. The thin-film piezoelectric element has ZrO2 as the main component of the outermost layer of the oxide film which covers the laminate. Young's modulus of the ZrO2 is 190 GPa, giving a significantly low value compared with Young's modulus of MgO, 245 GPa. Consequently, the influence of the oxide film on the reduction in the displacement magnitude of the piezoelectric film is smaller than the influence of the MgO thin film left in the conventional thin-film piezoelectric element. As a result, the thin-film piezoelectric element decreases the influence of the oxide film on the degradation of element characteristics compared with the conventional thin-film piezoelectric element.
公开/授权文献
- US07247975B2 Thin-film piezoelectric element and method of making same 公开/授权日：2007-07-24
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