发明申请
- 专利标题: Method of fabricating inductor and structure formed therefrom
- 专利标题(中): 制造电感器及其结构的方法
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申请号: US10810435申请日: 2004-03-25
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公开(公告)号: US20050212641A1公开(公告)日: 2005-09-29
- 发明人: Chien-Chou Hung , Hua-Chou Tseng , Tsun-Lai Hsu , Cheng-Wen Fan , Chia-Hung Chin , Ellis Lin
- 申请人: Chien-Chou Hung , Hua-Chou Tseng , Tsun-Lai Hsu , Cheng-Wen Fan , Chia-Hung Chin , Ellis Lin
- 主分类号: H01F5/00
- IPC分类号: H01F5/00 ; H01F41/04
摘要:
An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.
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