摘要:
An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.
摘要:
An inductor formed on a substrate having a dielectric layer thereon is disclosed. The inductor includes a first inductor pattern, a second inductor pattern a third inductor pattern. The first inductor pattern is formed within the dielectric layer, the second inductor pattern is formed on the first inductor pattern and electrically connected thereto, and the third inductor pattern is formed on the second inductor pattern and electrically connected thereto, wherein the first inductor pattern, the second inductor pattern, and the third inductor pattern have similar pattern. Because the thickness of the inductor can be increased by forming a multi-layer inductor structure, the resistance of the inductor, therefore, is reduced.
摘要:
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
摘要:
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
摘要:
A fabrication method of an electrostatic discharge protection circuit is described, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
摘要:
A structure of an electrostatic discharge protection circuit, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
摘要:
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
摘要:
A substrate is provided and a top interconnection metal layer and a primary winding layer are formed thereon. Then a passivation layer having a plurality of via exposed parts of the top interconnection metal layer is formed on the substrate. A secondary winding layer and at least a bonding pad are formed on the passivation layer. The bonding pad electrically connects to the top interconnection metal layer through the via.
摘要:
A structure of an electrostatic discharge protection circuit, in which a buried layer is formed in the substrate of the electrostatic discharge protection circuit, and a sinker layer electrically connected to the buried layer and a drain is also formed therein. Thereby, when the electrostatic discharge protection circuit is activated, the current flows from a source through the buried layer and the sinker layer to the drain. The current flow path is remote from the gate dielectric layer to avoid damaging the gate dielectric by a large current, so as to improve the dielectric strength of the electrostatic discharge protection circuit.
摘要:
A method for producing an IC layout with radio frequency devices is provided. The method has following steps. Type information of at least one RF device is inputted, and at least one RF parameter corresponding to the RF device is inputted as well. A frequency response result is then generated based on the type information and the RF parameter. When the frequency response result meets the required specification, an IC layout process is performed based on the frequency response result. However, when the frequency response result doesn't meet the required specification, another RE parameter is inputted again to produce new frequency response result.