发明申请
- 专利标题： Method for using a wet etch to manufacturing a semiconductor device having a silicided gate electrode and a method for manufacturing an integrated circuit including the same
- 专利标题（中）： 使用湿式蚀刻来制造具有硅化物栅电极的半导体器件的方法以及包括其的集成电路的制造方法
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申请号： US10884665申请日： 2004-07-02
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公开(公告)号： US20050215038A1公开(公告)日： 2005-09-29
- 发明人: Lindsey Hall , Haowen Bu , Shaofeng Yu
- 申请人： Lindsey Hall , Haowen Bu , Shaofeng Yu
- 申请人地址： US TX Dallas 75256
- 专利权人： Texas Instruments, Incorporated
- 当前专利权人： Texas Instruments, Incorporated
- 当前专利权人地址： US TX Dallas 75256
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L21/44 ; H01L29/49 ; H01L29/78
摘要：
The present invention provides a method for manufacturing a semiconductor device and a method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing the semiconductor device, among other possible steps, forming a polysilicon gate electrode (250) over a substrate (210) and forming a protective layer (260) over the polysilicon gate electrode (250) to provide a capped polysilicon gate electrode (230). The method further includes forming a protective oxide (510) on a surface proximate the polysilicon gate electrode (250), and removing the protective oxide (510) using a wet etch, the wet etch not having a substantial impact on the protective layer (260).
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