发明申请
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11135417申请日： 2005-05-24
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公开(公告)号： US20050218424A1公开(公告)日： 2005-10-06
- 发明人: Hidekatsu Onose , Hideo Homma , Atsuo Watanabe
- 申请人： Hidekatsu Onose , Hideo Homma , Atsuo Watanabe
- 优先权： JP2002-297026 20021010
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/337 ; H01L29/10 ; H01L29/772 ; H01L29/808 ; H01L29/32
摘要：
A semiconductor switching device for an inverter includes a first conductivity type, low impurity concentration, semiconductor substrate having a band gap equal to or greater than 2.0 eV, a first conductivity type first region formed in a first plane of the substrate having a resistance lower than the substrate, a first electrode formed in another plane of the first region, a first conductivity type second region formed in a second plane of the substrate, and a second electrode formed on the second region. A trench is formed in the second plane, a control region is formed from a bottom of the trench into the substrate and a control electrode of a different conductivity type is formed on the control region. The second electrode is formed over the control electrode through an insulator film, and the control electrode is formed on the trench sidewalls so the control region contacts the second region.
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