发明申请
US20050218453A1 Strained-semiconductor-on-insulator device structures with elevated source/drain regions
有权
具有升高的源极/漏极区域的应变半导体绝缘体上器件结构
- 专利标题： Strained-semiconductor-on-insulator device structures with elevated source/drain regions
- 专利标题（中）： 具有升高的源极/漏极区域的应变半导体绝缘体上器件结构
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申请号： US11125507申请日： 2005-05-10
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公开(公告)号： US20050218453A1公开(公告)日： 2005-10-06
- 发明人: Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
- 申请人： Thomas Langdo , Matthew Currie , Richard Hammond , Anthony Lochtefeld , Eugene Fitzgerald
- 申请人地址： US NH Salem
- 专利权人： AmberWave Systems Corporation
- 当前专利权人： AmberWave Systems Corporation
- 当前专利权人地址： US NH Salem
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/331 ; H01L21/336 ; H01L21/337 ; H01L21/762 ; H01L21/84 ; H01L27/12 ; H01L29/786 ; H01L27/01
摘要：
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
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